STD3NB50
N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™ MOSFET
PRELIMINARY DATA TYPE STD3NB50
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s...
STD3NB50
N - CHANNEL 500V - 2.5Ω - 3A - IPAK/DPAK PowerMESH™
MOSFET
PRELIMINARY DATA TYPE STD3NB50
www.DataSheet4U.com
s s s s s
V DSS 500 V
R DS(on) < 2.8 Ω
ID 3A
TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 2 1
3 1
DPAK TO-252
(Suffix "T4")
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
IPAK TO-251 (Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID IDM ( ) P tot dv/dt( 1 ) T stg Tj May 1998 Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery
voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 500 500 ± 30 3 1.9 12 50 0.4 4.5 -65 to 150 150
(1) ISD ≤3A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit...