STD3NK80Z-1
Datasheet
N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power MOSFET in an IPAK package
Features
TAB 3
2 1
...
STD3NK80Z-1
Datasheet
N-channel 800 V, 3.6 Ω typ., 2.5 A SuperMESH Power
MOSFET in an IPAK package
Features
TAB 3
2 1
IPAK
D(2, TAB)
Order code
VDS
STD3NK80Z-1
800 V
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
Applications
RDS(on) max. 4.5 Ω
ID 2.5 A
Switching applications
G(1)
Description
This high-
voltage device is a Zener-protected N-channel Power
MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for the most demanding
applications.
Product status link STD3NK80Z-1
Product summary
Order code
STD3NK80Z-1
Marking
D3NK80Z
Package
IPAK
Packing
Tube
DS14364 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD3NK80Z-1
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source
voltage
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
ESD
Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)
dv/dt(2)
Peak diode recovery
voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limited...
