STD3NM50-1

STD3NM50 STD3NM50-1 N-CHANNEL 500V - 2.5Ω - 3A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE STD3NM50 STD3NM50-1 www.DataSheet4U.com s s s s VDSS 500V 500V RDS(on) <3Ω <3Ω ID 3A 3A s s TYPICAL RDS(on) = 2.5 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS 3 1 2 1 3 DPAK TO-252 IPAK TO-251 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT VESD(G-S) dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15KΩ) Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Juncti...