STD3PS25

STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY™ MOSFET TYPE VDSS RDS(on) ID STD3PS25 STD3PS25-1 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A s TYPICAL RDS(on) = 2.1Ω s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY s GATE-SOURCE ZENER DIODE 3 1 DPAK IPAK 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s CONSUMER s LIGHTING ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM (1) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor Tstg Storage Temperature Tj Max. Operating Junction Temperature Value 250 250 ±25 3 1.9 12 45 0.36 – 50 to 150 150 Unit V V V A A A W W/°C °C °C June 2003 1/10 STD3PS25 - STD3PS25-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl Maximum Lead Temperature For Soldering Purpose 2.77 100 275 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHE...