STD40P8F6AG

STD40P8F6AG Automotive-grade P-channel -80 V, 18.5 mΩ typ., -40 A STripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code STD40P8F6AG VDSS -80 V RDS(on) max. 28 mΩ ID -40 A  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STD40P8F6AG AM11258v1 Table 1: Device summary Marking Package 40P8F6 DPAK Packing Tape and reel July 2016 DocID029583 Rev 1 This is information on a product in full production. 1/16 www.st.com Contents Contents STD40P8F6AG 1 Electrical ratings .....................................