STD437S

Green Product STU437S STD437S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -32A R DS(ON) (m Ω) Max 16 @ VGS=-10V 30 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a e Limit -40 ±20 -32 -25.6 -94 121 Units V V A A A mJ W W °C TC=25°C TC=70°C d -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation TC=25°C TC=70°C 42 27 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Sep,09,2013 1 www.samhop.com.tw STU437S STD437S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Min Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c -40 1 ±100 VGS= ±20V , VDS=0V VDS=VGS , ...