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STD438S Datasheet

Part Number STD438S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STD438S DatasheetSTD438S Datasheet (PDF)

STU/D438SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.4 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 9 @ VGS=10V 40V 50A 11 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-So.

  STD438S   STD438S






N-Channel Enhancement Mode Field Effect Transistor

STU/D438SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.4 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 9 @ VGS=10V 40V 50A 11 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b IAS Single Pulse Avalanche Current c EAS Single Pulse Avalanche Energy c PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Limit 40 ±20 50 40 147 23 132 42 27 -55 to 175 3 50 Units V V A A A A mJ W W °C °C/W °C/W Details are subject.


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