Green Product
STU/D446S
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect ...
Green Product
STU/D446S
Ver 2.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
40V
ID
38A
R DS(ON) (m Ω) Max
16.5 @ VGS=10V 28 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-252 and TO-251 Package. Pb Free and Halogan Free.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
b d a
Limit 40 ±20 TC=25°C TC=70°C 38 30 111 64 TC=25°C TC=70°C 42 27 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case
a a
3 50
°C/W °C/W
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice.
Jul,14,2011
1
www.samhop.com.tw
STU/D446S
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS Zero Gate
Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=32V , VGS=0V
40 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold
Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
V...
