STD4525NL

S T U/D4525NL S amHop Microelectronics C orp. Arp,20 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 25V F E AT UR E S ( m W ) T yp ID 45A R DS (ON) S uper high dense cell design for low R DS (ON ). 7.5 @ V G S = 10V 15 @ V G S = 4.5V R ugged and reliable. TO251 and TO 252 P ackage. D D G S G D S G S TU S E R IE S TO-252AA(D-P AK) S TD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol Vspike d V DS V GS ID IDM IS PD T J , T S TG Limit 30 25 20 45 75 20 50 -55 to 175 Unit V V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient a 1 R JC R JA 3 50 C /W C /W S T U/D4525NL E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =9A V GS =4.5V, ID= 5A V DS = 10V, V GS = 10V V DS = 10V, ID = 9A Min Typ C Max Unit 25 1 V uA 100 nA 1 1.8 7.5 15 60 13.5 1485 440 290 3 21 V m ohm OFF CHAR ACTE R IS TICS Drain-S ource...