®
STD45NF03L
N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STD45NF03L
s s
V DSS 3...
®
STD45NF03L
N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET™ POWER
MOSFET
PRELIMINARY DATA
TYPE STD45NF03L
s s
V DSS 30 V
R DS(o n) < 0.013 Ω
ID 45 A
www.DataSheet4U.com s TYPICAL RDS(on)
= 0.011 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power
MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO
AMPLIFIERS s DC-DC & DC-AC CONVERTERS
DPAK TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source
Voltage (VGS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) G ate-source
Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 20 45 31.5 180 55 0.37 200 -65 to 175 175
( 1) starting Tj = 25 oC, ID = 22.5A , VDD = 20V
Unit V V V A A A W W /o C mJ
o o
C C
() Pulse width limited by safe operating area
September 1999
1/6
STD45NF03L
THERMAL DATA
R th j-pc b R thj -amb R t hj-s ink Tl Thermal Resist...