STD46P4LLF6

STD46P4LLF6 P-channel 40 V, 0.0125 Ω typ., StripFET™ F6 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2, TAB) G(1)  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Table 1: Device summary Order codes Marking Package Packaging STD46P4LLF6 46P4LLF6 DPAK Tape and reel S(3) Features Order codes STD46P4LLF6 VDSS 40 V RDS(on) max. 0.015 Ω AM11258v1 ID 46 A For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. December 2014 DocID025772 Rev 3 This is information on a product in full production. 1/16 www.st.com Contents Contents STD46P4LLF6 1 Electrical ratings ...........