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STD4N90K5

STMicroelectronics

N-channel Power MOSFET

STD4N90K5 N-channel 900 V, 1.90 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Featu...


STMicroelectronics

STD4N90K5

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Description
STD4N90K5 N-channel 900 V, 1.90 Ω typ.,3 A MDmesh™ K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code STD4N90K5 VDS 900 V RDS(on) max. 2.10 Ω ID 3A Figure 1: Internal schematic diagram  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STD4N90K5 Table 1: Device summary Marking Package 4N90K5 DPAK Packing Tape and reel November 2016 DocID029956 Rev 1 This is information on a product in full production. 1/15 www.st.com Contents Contents STD4N90K5 1 Electrical ratings ..................




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