STD4NC50

N-CHANNEL 500V - 1.3Ω - 3.7A DPAK/IPAK PowerMesh™II MOSFET TYPE STD4NC50 STD4NC50-1 www.DataSheet4U.com s s s s s STD4NC50 STD4NC50-1 VDSS 500V 500V RDS(on) <1.5Ω <1.5Ω ID 3.7A 3.7A TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 1 3 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. DPAK (NO SUFFIX) IPAK (SUFFIX“-1”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) s HIGH CURRENT, HIGH SPEED SWITCHING s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (*) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 3.7 2.3 14.8 50 0.4 3 –65 to 150 150 (1)ISD ≤ 3.7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area August 2001 1/9 STD4NC50/-1 THERMA...