STD4NK100Z
Datasheet
Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code STD4NK100Z
VDS 1000 V
RDS(on) max. 6.8 Ω
ID 2.2 A
• AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
Applications
• Switching applications
AM01476v1_tab
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the.
N-channel Power MOSFET
STD4NK100Z
Datasheet
Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code STD4NK100Z
VDS 1000 V
RDS(on) max. 6.8 Ω
ID 2.2 A
• AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
Applications
• Switching applications
AM01476v1_tab
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STD4NK100Z
Product summary(1)
Order code
STD4NK100Z
Marking
4NK100Z
Package
DPAK
Packing
Tape and reel
1. The HTRB test was performed at 80% V(BR)DSS in compliance with AECQ101 rev. C. All the other tests were performed according to rev. D.
DS8902 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD4NK100Z
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
ESD
Gate-source human body m.