DatasheetsPDF.com

STD4NK100Z Datasheet

Part Number STD4NK100Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STD4NK100Z DatasheetSTD4NK100Z Datasheet (PDF)

STD4NK100Z Datasheet Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications AM01476v1_tab Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the.

  STD4NK100Z   STD4NK100Z






N-channel Power MOSFET

STD4NK100Z Datasheet Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications AM01476v1_tab Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STD4NK100Z Product summary(1) Order code STD4NK100Z Marking 4NK100Z Package DPAK Packing Tape and reel 1. The HTRB test was performed at 80% V(BR)DSS in compliance with AECQ101 rev. C. All the other tests were performed according to rev. D. DS8902 - Rev 3 - April 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD4NK100Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source human body m.


2019-01-25 : STU3N80K5    STF4LN80K5    STL4LN80K5    STFW3N170    STW3N170    STF3LN80K5    STD2N80K5    STFI5N80K5    STF12N120K5    STU3LN80K5   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)