STD4NK60ZT4
Datasheet
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)...
STD4NK60ZT4
Datasheet
N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power
MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
ID
STD4NK60ZT4
600 V
2Ω
4A
100% avalanche tested Gate charge minimized Very low intrinsic capacitance Zener-protected
Applications
Switching applications
Description
AM01476v1_tab
This high-
voltage device is a Zener-protected N-channel Power
MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link STD4NK60ZT4
Product summary
Order code
STD4NK60ZT4
Marking
D4NK60Z
Package
DPAK
Packing
Tape and reel
DS2818 - Rev 10 - September 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD4NK60ZT4
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source
voltage
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
ESD
Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)
dv/dt(2)
Peak diode recovery
voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limite...