STD50NH02L

N-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK STripFET™ III POWER MOSFET TYPE STD50NH02L s s s s s s s STD50NH02L VDSS 24 V RDS(on) < 0.0105 Ω ID 50 A s TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION The STD50NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STD50NH02LT4 STD50NH02L-1 MARKING D50NH02L D50NH02L PACKAGE TO-252 TO-251 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 50 36 200 60 0.4 280 -55 to 175 ...