STD5406N

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features Low RDS(on) High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant Applications Electronic Brake Systems Electronic Power Steering Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current − RqJC Power Dissipation − RqJC Continuous Drain Current − RqJA (Note 1) Steady State Steady State TC = 25°C TC = 125°C TC = 25°C Steady TA = 25°C State TA = 125°C VDSS VGS ID PD ID 40 ±20 70 40 100 12.2 7.0 V V A W A Power Dissipation − RqJA (Note 1) Steady TA = 25°C State PD 3.0 W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature IDM TJ, TSTG 150 −55 to 175 A °C Source Current (Body Diode) Pulsed Single Pulse Drain−to Source Avalanche Energy − (VDD = 50 V, VGS = 10 V, IPK = 30 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS EAS TL 63.5 A 450 mJ 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max ...