STD55N4F5

www.DataSheet4U.com STD55N4F5 N-channel 40 V, 7.1 mΩ, 40 A, DPAK STripFET™ V Power MOSFET Features Type STD55N4F5 ■ ■ ■ VDSS 40 V RDS(on) max < 10 mΩ ID 55 A Pw 60 W 3 1 Standard threshold drive 100% avalanche tested Surface mounting DPAK (TO-252) DPAK Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Marking D55N4 Package DPAK Packaging Tape and reel Order codes STD55N4F5 May 2009 Doc ID 15661 Rev 1 1/11 www.st.com 11 www.DataSheet4U.com Contents STD55N4F5 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....