STD5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1...
STD5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power
MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
ID
STD5N95K3
950 V
3.5 Ω
4A
100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Applications
Switching applications
AM01476v1_tab
Description
This MDmesh K3 Power
MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Product status link STD5N95K3
Product summary
Order code
STD5N95K3
Marking
5N95K3
Package
DPAK
Packing
Tape and reel
DS6265 - Rev 4 - April 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD5N95K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (2) Peak diode recovery volta...
