STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power MOSFET in DPAK and TO-220 packages
Datasheet ...
STD9NM40N, STP9NM40N
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh™ II Power
MOSFET in DPAK and TO-220 packages
Datasheet — production data
Features
Order codes STD9NM40N STP9NM40N
VDSS@TJMAX RDS(on)max. ID
450 V
< 0.79 Ω 5.6 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Applications
■ Switching applications
Description
These devices are N-channel Power
MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
TAB
3 1
DPAK
TAB
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary Order codes STD9NM40N STP9NM40N
Marking 9NM40N
Packages DPAK TO-220
Packaging Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 023762 Rev 2
1/18
www.st.com
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Contents
Contents
STD9NM40N, STP9NM40N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
