Green Product
STE336S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Tr...
Green Product
STE336S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
22A
R DS(ON) (m Ω) Typ
4.7 @ VGS=10V 8.7 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package.
5
6
7
8
PIN 1
1 2 3 4
Power Pak 5 x 6
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
a
Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 22 18.4 77 3.8 2.6 -55 to 175
Units V V A A A W W °C
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
40
°C/W
Details are subject to change without notice.
Jan,31,2013
1
www.samhop.com.tw
STE336S
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS IGSS Zero Gate
Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=24V , VGS=0V
30 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold
Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
VDS=VGS , ID=250uA VGS=10V , ID=11A VGS=4.5V , ID=8A VDS=10V , ID=11A
1
1.8 4.7 8.7 26
3 5.9 11.8
V m ohm m ohm S pF pF pF
DYNAMIC CHARACTERISTICS Input Capacitance...