®
STE38NB50F
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
TYPE STE38NB50F
s s s s s s s
V DSS 500 V
R ...
®
STE38NB50F
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™
MOSFET
TYPE STE38NB50F
s s s s s s s
V DSS 500 V
R DS(on) < 0.14 Ω
ID 38 A
TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE
VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED
VOLTAGE SPREAD
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt (1) T s tg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω) G ate-source
Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery
voltage slope Storage T emperature Max. Operating Junction Temperature
o o o
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Value 500 500 ± 30 38 24 152 400 3.2 4.5 -65 to 150 150
( 1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ T...