STE70NM60
N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh™Power MOSFET
TYPE STE70NM60 VDSS 600V RDS(on) < 0....
STE70NM60
N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh™Power
MOSFET
TYPE STE70NM60 VDSS 600V RDS(on) < 0.055Ω ID 70 A
TYPICAL RDS(on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL INDUSTRY’S LOWEST ON-RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary
MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high
voltage converters allowing system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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ORDERING INFORMATION
SALES TYPE STE70NM60 MARKING E70NM60 PACKAGE ISOTOP PACKAGING TUBE
March 2003
1/8
STE70NM60
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Gate source ESD(HBM-C=100pF, R=15KΩ) Derating Factor P...