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STF1016C Datasheet

Part Number STF1016C
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STF1016C DatasheetSTF1016C Datasheet (PDF)

STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 17 @ VGS=10V 100V 40A 19 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage d Gate-Source Vo.

  STF1016C   STF1016C






N-Channel Enhancement Mode Field Effect Transistor

STF1016CGreen Product Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 17 @ VGS=10V 100V 40A 19 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. DFN 3.3 X 3.3 PIN 1 G S S S (Bottom view) DD D D D5 D6 D7 D8 4G 3S 2S 1S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS Parameter Drain-Source Voltage d Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=100°C TA=25°C EAS Single Pulse Avalanche Energy e PD Maximum Power Dissipation TC=25°C TA=25°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Limit 100 ±20 40 25.3 8 160 196 62.5 1.92 -55 to 150 65 2 Units V V A A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 J.


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