STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5
Datasheet
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²...
STB42N65M5, STF42N65M5 STP42N65M5, STW42N65M5
Datasheet
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power
MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
Features
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
TO-220 1 2 3
TO-247
3 2 1
D(2, TAB)
Order codes
VDS
RDS(on) max.
STB42N65M5
STF42N65M5 STP42N65M5
650 V
79 mΩ
STW42N65M5
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
ID 33 A
Applications
G(1) S(3)
Switching applications
Description
AM01475v1_noZen
These devices are N-channel Power
MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Product status links STB42N65M5 STF42N65M5 STP42N65M5 STW42N65M5
DS6033 - Rev 5 - March 2024 For further information contact your local STMicroelectronics sales office.
www.st.com
STB42N65M5, STF42N65M5, STP42N65M5, STW42N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, TO-220, TO-247
TO-220FP
VGS
Gate-source
voltage
±25
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
33 20.8
33(1) 20.8 (1)
IDM(2)
Drain current (pulsed)
132
132
PTOT
Total power dissipation at TC = 25 °C
190
40
dv/dt(3)
Peak dio...