STF5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in a TO-220FP package
3 2 1 TO-220FP D(2)
G(1...
STF5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power
MOSFET in a TO-220FP package
3 2 1 TO-220FP D(2)
G(1)
S(3)
AM15572v1_no_tab
Features
Order code
VDS
RDS(on) max.
ID
STF5N95K3
950 V
3.5 Ω
4A
100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected
Applications
Switching applications
Description
This MDmesh K3 Power
MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
Product status link STF5N95K3
Product summary
Order code
STF5N95K3
Marking
5N95K3
Package
TO-220FP
Packing
Tube
DS14291 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STF5N95K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID(1)
Drain current (continuous) at TC = 100 °C
IDM (2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery vo...
