DatasheetsPDF.com

STF8NM60ND Datasheet

Part Number STF8NM60ND
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STF8NM60ND DatasheetSTF8NM60ND Datasheet (PDF)

isc N-Channel MOSFET Transistor STF8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuo.

  STF8NM60ND   STF8NM60ND






Part Number STF8NM60ND
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power MOSFET
Datasheet STF8NM60ND DatasheetSTF8NM60ND Datasheet (PDF)

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 1 3 1 2 The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capa.

  STF8NM60ND   STF8NM60ND







N-Channel MOSFET

isc N-Channel MOSFET Transistor STF8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 25 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 5 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.5A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±20V;VDS= 0 VDS= Max rating; VDS= Max rating; Tj= 125℃ IS= 7A; VGS=0 STF8NM60ND MIN MAX UNIT 600 V 3 5 V 0.7 Ω ±100 nA 1 100 μA 1.3 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time withou.


2020-12-05 : FQB8N60C    FQI8N60C    DS1726    DS1626    FDB045AN08A0-F085    STD7ANM60N    STD7NM60N    STD8N65M5    STD8NM50N    STD8NM60ND   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)