STFI10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a I²PAKFP package
Datasheet - production data...
STFI10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power
MOSFET in a I²PAKFP package
Datasheet - production data
Features
Order code STFI10LN80K5
VDS 800 V
RDS(on) max. 0.63 Ω
ID 8A
1 23 I 2 PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
Fully insulated and low profile package with increased creepage path from pin to heatsink plate
Industry’s RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
Applications
Switching applications
Description
This very high
voltage N-channel Power
MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
S(3)
Order code STFI10LN80K5
AM15572v1_no_tab
Table 1: Device summary Marking 10LN80K5
Package I²PAKFP
Packing Tube
February 2016
...