STFI20NK50Z

STFI20NK50Z N-channel 500 V, 0.23 Ω , 17 A Zener-protected SuperMESH™ Power MOSFET in I²PAKFP package Datasheet — production data Features Type STFI20NK50Z VDSS 500 V RDS(on) max < 0.27 Ω ID 17 A PTOT 40 W ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate Extremely high dv/dt capability 100% avalanche tested Gate charge minimized 1 2 ■ ■ ■ 3 I2PAKFP (TO-281) Applications ■ Figure 1. Internal schematic diagram D(2) Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Marking 20NK50Z Package I2PAKFP (TO-281) Packaging Tube Order codes STFI20NK50Z March 2012 This is information on a product in full production. Doc ID 019007 Rev 3 1/13 www.st.com 13 http://www.Datasheet4U.com Contents STFI20NK50Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits ......................