STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in T...
STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power
MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
Datasheet − production data
Features
TAB
Order codes
STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3
VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A
PTOT
30 W 30 W 90 W 90 W 90 W
■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery
characteristics ■ Zener-protected
Applications
■ Switching applications
3 2 1
TO-220FP
TAB
3 2 1
TO-220
123
I²PAK
1 23
I²PAK FP
TAB
IPAK
3
2 1
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These SuperMESH3™ Power
MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalan...
