STFI9N60M2

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Features Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A Extremely low gate charge Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram Applications Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. AM15572v1 Order codes STF9N60M2 STFI9N60M2 . Table 1. Device summary Marking Package 9N60M2 TO-220FP I2PAKFP Packaging Tube March 2014 This is information on a product in full production. DocID024728 Rev 2 1/15 www.st.com Contents Contents STF9N60M2, STFI9N60M2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits ....