STFU18N60M2

STFU18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features 3 12 TO-220FP ultra narrow leads D(2) Order code V DS RDS(on) max ID STFU18N60M2 600 V 0.280 Ω 13 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Applications Switching applications LLC converters, resonant converters G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device S(3) AM15572v1_no_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STFU18N60M2 Product summary Order code STFU18N60M2 Marking 18N60M2 Package TO-220FP ultra narrow leads Packing Tube DS10930 - Rev 3 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STFU18N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C IDM (2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (3) Peak diode recovery voltage slope dv/dt (4) MOSFET dv/dt ruggedness VISO Insulation withstand voltage (RMS) from all three leads to external ...