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STFW24N60M2 Datasheet

Part Number STFW24N60M2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STFW24N60M2 DatasheetSTFW24N60M2 Datasheet (PDF)

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP, I PAKFP and TO-3PF packages Datasheet − production data Features 3 2 1 TO-220FP 123 I2PAKFP (TO-281) 1 3 2 1 TO-3PF Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 STFI24N60M2 650 V 0.19 Ω 18 A STFW24N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input res.

  STFW24N60M2   STFW24N60M2






N-CHANNEL POWER MOSFET

STF24N60M2, STFI24N60M2, STFW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP, I PAKFP and TO-3PF packages Datasheet − production data Features 3 2 1 TO-220FP 123 I2PAKFP (TO-281) 1 3 2 1 TO-3PF Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 STFI24N60M2 650 V 0.19 Ω 18 A STFW24N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding h.


2019-01-23 : STD5NK40ZT4    STW24N60M6    STF24N60M6    STD5NK40Z-1    STP24N60M6    STI24N60M6    STD7NK40ZT4    STD16N50M2    STF16N60M6    STD3N40K3   


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