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STFW4N150 Datasheet

Part Number STFW4N150
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL MOSFET
Datasheet STFW4N150 DatasheetSTFW4N150 Datasheet (PDF)

STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS 1500 V 1500 V 1500 V 1500 V RDS(on) max <7Ω <7Ω <7Ω <7Ω ID 4A 4A 4A 4A 3 1 2 1 2 3 TO-220 TO-247 www.DataSheet4U.com ■ ■ ■ ■ ■ ■ 1. All data which refers solely to the TO-3PF package is preliminary 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3P.

  STFW4N150   STFW4N150






Part Number STFW4N150
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet STFW4N150 DatasheetSTFW4N150 Datasheet (PDF)

isc N-Channel MOSFET Transistor STFW4N150 ·FEATURES ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1500V(Min) ·Static Drain-Source On-Resistance : RDS(on) < 7Ω ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1500 V VGS Gate-Source Voltage-Continuous ±30 .

  STFW4N150   STFW4N150







N-CHANNEL MOSFET

STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type STFV4N150 STFW4N150 (1) STP4N150 STW4N150 VDSS 1500 V 1500 V 1500 V 1500 V RDS(on) max <7Ω <7Ω <7Ω <7Ω ID 4A 4A 4A 4A 3 1 2 1 2 3 TO-220 TO-247 www.DataSheet4U.com ■ ■ ■ ■ ■ ■ 1. All data which refers solely to the TO-3PF package is preliminary 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF and TO-220FH plastic packages Creepage distance path is 5.4 mm (typ.) for TO-3PF Creepage distance path is > 4 mm for TO-220FH Figure 1. TO-3PF 3 1 2 1 2 3 TO-220FH Internal schematic diagram. Application ■ Switching applications Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary Order codes STFV4N150 STFW4N150 STP4N150 STW4N150 April 2008 Marking 4N150 4N150 P4N150 W4N150 Rev 6 Package TO-220FH TO-3PF TO-220 TO-247 Packaging Tube Tube Tube Tube 1/16 www.st.com 16 Contents STFV4N150 - STFW4N150 - STP4N150 - STW4N150 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


2008-09-16 : HDF-0505    HDF-0512    HDF-0515    HDF-1205    HDF-1212    HDF-2405    HDF-2412    HDF-2415    HDF-4805    HDF-4812   


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