STFW6N120K3, STP6N120K3, STW6N120K3
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power MOSFET in TO-3PF, TO-220 and TO...
STFW6N120K3, STP6N120K3, STW6N120K3
N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3™ Power
MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on) max
ID
Ptot
STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W STP6N120K3 1200 V < 2.4 Ω 6 A 150 W STW6N120K3 1200 V < 2.4 Ω 6 A 150 W
■ 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power
MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
3 2 1
TO-3PF
TAB
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device summary Order codes
STFW6N120K3 STP6N120K3 STW6N120K3
Marking 6N120K3
Package TO-3PF TO-220 TO-247
Packaging Tube
November 2012
This is information on a product in full production.
Doc ID 15572 Rev 3
1/17
www.st.com
17
Contents
Contents
STFW6N120K3, STP6N120K3, STW6N120K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electric...
