STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package
Datasheet - prod...
STT6N3LLH6
N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power
MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
3 2 1
SOT23-6L
Features
Order code STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.025 Ω
(VGS= 10 V)
30 V
6 A 1.6 W
0.036 Ω
(VGS= 4.5 V)
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
Figure 1. Internal schematic diagram
Applications
Switching applications
Description
This device is an N-channel Power
MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
Order code STT6N3LLH6
Table 1. Device summary
Marking
Package
STG1
SOT23-6L
Packaging Tape and reel
March 2014
This is information on a product in full production.
DocID023012 Rev 3
1/12
www.st.com
Contents
Contents
STT6N3LLH6
1 Electrical ratings . . . . ...
