www.DataSheet4U.com
S T G 2507
S amHop Microelectronics C orp. May,10 2005
Dual P -C hannel E nhancement Mode Field E ...
www.DataSheet4U.com
S T G 2507
S amHop Microelectronics C orp. May,10 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( mW ) Max
ID
6.2A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
17 @ V G S = -4.5V 25 @ V G S = -2.5V
R ugged and reliable. S urface Mount P ackage.
D2
8
S2
7
S2
6
G2
5
T S S OP
1
(T OP V IE W)
1 2 3 4
D1
S1
S1
G1
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource
Voltage Gate-S ource
Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 12 -6.2 -25 -1.7 1.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 85 C /W
1
www.DataSheet4U.com
S T G 2507
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown
Voltage Zero Gate
Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = -16V, V GS = 0V V GS = 12V,V DS = 0V V DS = V GS , ID = 250uA V GS = -4.5V,ID = - 6 A V GS =-2.5V,ID =- 4 A V DS =-5V,V GS =-4.5V V DS = -5V, ID = -6 A
Min Typ C Max Unit
-20 -1 V uA 100 nA -0.5 -0.8 -1.5 15 17 20 25 22 1782 488 77 V
m ohm m ohm
ON CHAR ACTE R IS...