STG3P2M10N60B

STG3P2M10N60B 1-Phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module PRELIMINARY DATA General features www.DataSheet4U.com Type VCES 600V VCE(sat)(Max) @ IC=7A, IC@80°C Ts=25°C < 2.5V 10A STG3P2M10N60B ■ ■ ■ ■ ■ ■ ■ ■ N-channel very fast PowerMESH™ IGBT Lower on-voltage drop (Vcesat) Lower CRES / CIES ratio (no cross-conduction susceptbility) Very soft ultra fast recovery antiparallel diode High frequency operation up to 70 KHz New generation products with tighter parameter distribution Compact design Semitop®2 is a trademark of semikron SEMITOP®2 Internal schematic diagram Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performances. Applications ■ ■ High frequency motor controls Motor drivers Order codes Sales type STG3P2M10N60B Marking G3P2M10N60B Package SEMITOP®2 Packaging SEMIBOX May 2006 Rev1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STG3P2M10N60B Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Typical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 www.Dat...