STG8206

www.DataSheet4U.com S T G 8206 S amHop Microelectronics C orp. Dec,27.2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 30 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2 3 4 D1 S1 S1 G1 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 6 40 2 1.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 85 C /W 1 www.DataSheet4U.com S T G 8206 E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 5A V GS =2.5V, ID = 3A V DS = 5V, ID =5A Min Typ C Max Unit 20 1 V uA 100 nA 0.5 0.8 16 24 15 1290 295 231 1.5 20 30 V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage ...