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S T G 8211
S amHop Microelectronics C orp. Oct. 27. 2005
Dual N-C hannel E nhancement Mode Field E...
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S T G 8211
S amHop Microelectronics C orp. Oct. 27. 2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
13.5 @ V G S = 4.0V 18 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
T S S OP
D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2
D1
D2
G1
G2
(T OP V IE W)
S1
S2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource
Voltage Gate-S ource
Voltage Drain C urrent-C ontinuous a @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 10 40 1.7 1.5 -55 to 150 Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA 85 C /W
1
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S T G 8211
E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown
Voltage Zero Gate
Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 12V,V DS = 0V V DS = V GS , ID = 250uA V GS = 4V, ID = 5A V GS =2.5V, ID = 3A V DS = 5V, ID =5A
Min Typ C Max Unit
20 1 10 0.5 0.8 11 13.5 22 1815 406 255 1.5 13.5 18 V uA uA V
m ohm m ohm
ON C...