STG8810A

Green Product STG8810A Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 14.5 @ VGS=4.5V 15.0 @ VGS=4.0V 20V 7A 17.0 @ VGS=3.7V 19.5 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV. T S S OP D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2 D1 D2 G1 G2 (T OP V IE W) S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7.0 5.6 80 a Units V V A A A W W °C Maximum Power Dissipation 2.0 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Jul,02,2014 1 www.samhop.com.tw STG8810A Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=16V , VGS=0V 20 1 ±10 V uA uA VGS= ±12V , VDS=0V RDS(ON) Drain-Source On-State Resistance VDS=VGS , ID=1mA VGS=4.5V , ID=3.5A VGS=4.0V , ID=3.5A VGS=3.7V , ID=3.5A VG...