STGB20NB32LZ-1

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE t(s)s LOW ON-VOLTAGE DROP s HIGH CURRENT CAPABILITY ucs HIGH VOLTAGE CLAMPING FEATURE Prod t(s)DESCRIPTION lete ucUsing the latest high voltage technology based on a dpatented strip layout, STMicroelectronics has so rodesigned an advanced family of IGBTs, the b PPowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener - O teexhibits a very precise active clamping while the ) legate-emitter zener supplies an ESD protection. 3 1 D2PAK 123 I2PAK INTERNAL SCHEMATIC DIAGRAM roduct(s - ObsoAPPLICATIONS P t(s)s ELECTRONIC IGNITION FOR AUTOMOTIVE Obsoolleettee ProducORDERING INFORMATION ObsSALES TYPE MARKING PACKAGE PACKAGING STGB20NB32LZT4 GB20NB32LZ D2PAK TAPE & REEL STGB20NB32LZ-1 GB20NB32LZ I2P...