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STGB30M65DF2

STMicroelectronics

Trench gate field-stop IGBT


Description
STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 30 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast ...



STMicroelectronics

STGB30M65DF2

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