STGB7NB40LZ

STGB7NB40LZ N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB7NB40LZ s s s s s s VCES CLAMPED VCE(sat) < 1.50 V IC 14 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s AUTOMOTIVE IGNITION ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC RG PTOT ECL EECAV Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 100°C Minimum External Gate Resistor Total Dissipation at TC = 25°C Derating Factor Single Pulse Collector to Emitter Avalanche Energy IC= 13 A ; Tj= 150°C (see fig.1-2) Reverse Avalanche Energy IC = 7 A ;f= 100 Hz ; Tc = 25°C Storage Temperature Operating Junction Temperature Value CLAMPED 20 CLAMPED 14 500 100 0.66 130 10 Unit V V V A Ω W W/°C mJ mJ –55 to 175 °C March 2003 1/8 STGB7NB40LZ THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max (free air) 1.5 62.5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25°C UNLESS OTHERWI...