STGB7NB60HD

® STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH™ IGBT TYPE STGB7NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 7A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM ( ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 ± 20 14 7 56 80 0.64 -65 to 150 150 Unit V V A A A W W/ o C o o C C () Pulse width limited by safe operating area June 1999 1/8 STGB7NB60HD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Res...