STGD3NB60H

® STGD3NB60H N-CHANNEL 3A - 600V TO-252 PowerMESH™ IGBT TYPE STGD3NB60H s V CES 600 V V CE(sat ) < 2.8 V IC 3 A s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM ( ) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature o o o Value 600 20 ± 20 6 3 24 35 0.28 -65 to 150 150 Un it V V V A A A W W /o C o o C C () Pulse width limited by safe operating area June 1999 1/8 STGD3NB60H THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junc...