STGD3NB60SD

® STGD3NB60SD N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT PRELIMINARY DATA TYPE STGD3NB60SD s VCES 600 V V CE(sat) < 1.5 V IC 3A s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT INTEGRATED FREEWHEELING DIODE SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS GAS DISCHARGE LAMP s STATIC RELAYS s MOTOR CONTROL s DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM ( ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature o o Value 600 ± 20 6 3 25 48 0.32 -65 to 175 175 Unit V V A A A W W/ o C o o C C () Pulse width limited by safe operating area March 2000 1/8 STGD3NB60SD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max M...