STGD3NC60HD

STGD3NC60HD www.DataSheet4U.com N-CHANNEL 3A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD3NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 1 DPAK Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MOTOR DRIVERS s Table 2: Order Code PART NUMBER STGD3NC60HDT4 MARKING GD3NC60HD PACKAGE DPAK PACKAGING TAPE & REEL Rev. 1 February 2005 This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice 1/9 STGD3NC60HD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) IF PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (...