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STGD6NC60HD Datasheet

Part Number STGD6NC60HD
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet STGD6NC60HD DatasheetSTGD6NC60HD Datasheet (PDF)

www.DataSheet4U.com STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD6NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION .

  STGD6NC60HD   STGD6NC60HD






Part Number STGD6NC60HDT4
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description IGBT
Datasheet STGD6NC60HD DatasheetSTGD6NC60HDT4 Datasheet (PDF)

STGD6NC60HDT4 Datasheet N-channel 600 V, 7 A very fast IGBT TAB 23 1 DPAK C(2, TAB) G(1) E(3) Features Order codes VCES VCE(sat) max. IC (at TC = 100 °C) STGD6NC60HDT4 600 V 2.5 V 7A • Low on-voltage drop (VCE(sat)) • Low CRES / CIES ratio (no cross-conduction susceptibility) • Very soft ultra fast recovery antiparallel diode • High frequency operation NG1E3C2T Applications • High-frequency inverters • SMPS and PFC in both hard switch and resonant topologies • Motor drivers Descript.

  STGD6NC60HD   STGD6NC60HD







Part Number STGD6NC60H
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet STGD6NC60HD DatasheetSTGD6NC60H Datasheet (PDF)

www.DataSheet4U.com STGD6NC60H N-channel 600V - 7A - DPAK Very fast PowerMESH™ IGBT General features Type STGD6NC60H ■ ■ ■ VCES 600V VCE(sat)Max @25°C <2.5V IC @100°C 7A 3 1 Low on voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility) High frequency operation DPAK Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. T.

  STGD6NC60HD   STGD6NC60HD







N-CHANNEL IGBT

www.DataSheet4U.com STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD6NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25°C @100°C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 1 DPAK Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MOTOR DRIVERS s Table 2: Order Code PART NUMBER STGD6NC60HDT4 MARKING GD6NC60HD PACKAGE DPAK PACKAGING TAPE & REEL Rev. 1 June 2005 This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice 1/9 STGD6NC60HD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) IF PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (conti.


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