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STGD7NB60F

ST Microelectronics

N-CHANNEL IGBT

STGP7NB60F - STGD7NB60F N-CHANNEL 7A - 600V - TO-220 / DPAK PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP7NB60F STGD7NB60F ...


ST Microelectronics

STGD7NB60F

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Description
STGP7NB60F - STGD7NB60F N-CHANNEL 7A - 600V - TO-220 / DPAK PowerMESH™ IGBT PRELIMINARY DATA TYPE STGP7NB60F STGD7NB60F s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C < 2.4 V < 2.4 V IC @100°C 7A 7A 3 3 1 2 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (DPAK) 1 TO-220 DPAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching times for frequency applications (<40KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROLS s SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature 80 0.64 – 55 to 150 150 600 ±20 14 7 56 70 0.56 Value DPAK V V A A A W W/°C °C °C Unit ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA June 2003 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject ...




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